Silicon Wafer 12inch P-type 1-100Ω Oxide Film Semiconductor Substrate
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Silicon Wafer Specification:
- Size: 12inch;
- Method: CZ;
- Type: P;
- Dopant: B;
- Resistivity: 1~100Ω;
- Thickness: 775um±25;
- Oxide film: 100nm/300nm/500nm/1000nm (both sides);
- Surface: polished;
- Backside: polished;
- Packing: silicon wafer case ;
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