Silicon Carbide Substrate 8inch Dummy Grade N Type 4H SiC Wafer IGBT
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High-purity SiC substrate for research and development.
According to demand, we can provide custom-made service.
SiC Substrate Specification:
- Size: 8inch;
- Diameter: 200mm±0.2;
- Thickness: 500um±25;
- Surface Orientation: 4 toward [11-20]±0.5°;
- Notch orientation:[1-100]±5°；
- Notch depth: 1~1.5；
- Micropipe: <50;
- Resistivity: None;
- Poly areas: ≤30%;
- Scratch: None;
- Wafer edge: Chamfer;
- Surface finish: Double Side Polish, Si Face CMP;
- Packing: Multi-wafer Cassette Or Single Wafer Container;
Our Products and Service:
- Tracking number for every order
- 24/7 assistance: firstname.lastname@example.org
- Provide small quantities, special specifications products, customized services, etc.
- After confirming the order, we will arrange the shipment within 1-3 working days.
- We provide free shipping for products purchased above a certain amount.