Silicon Carbide Substrate 8inch Dummy Grade N Type 4H SiC Wafer IGBT

  • $5,285.00
    Unit price per 
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 High-purity SiC substrate for research and development.
 According to demand, we can provide custom-made service.

SiC Substrate Specification:

  • Size: 8inch;
  • Diameter: 200mm±0.2;
  • Thickness: 500um±25;
  • Surface Orientation: 4 toward [11-20]±0.5°;
  • Notch orientation:[1-100]±5°;
  • Notch depth: 1~1.5;
  • Micropipe: <50;
  • Resistivity: None;
  • TTV≤15um;
  • Warp≤70um;
  • Bow≤65um;
  • Poly areas: ≤30%;
  • Scratch: None;
  • Wafer edge: Chamfer;
  • Surface finish: Double Side Polish, Si Face CMP;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;

Our Products and Service:

  • Tracking number for every order

  • 24/7 assistance: service@fuledatech.com

  • Provide small quantities, special specifications products, customized services, etc.

Shipping Worldwide:

  • After confirming the order, we will arrange the shipment within 1-3 working days.
  • We provide free shipping for products purchased above a certain amount.
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