Silicon Carbide EPI Substrate 6inch Production Grade SiC Wafer IGBT

  • $1,990.00
    Unit price per 
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 High-purity SiC substrate for research and development.
 According to demand, we can provide custom-made service.

SiC Substrate Specification:

  • Size: 6inch;
  • Diameter: 150mm±0.5;
  • Thickness: 350 um±25;
  • Type:off-axis: N-Type;
  • Primary flat Location:<1120>+/-5degree
  • Epi-surface Inspection
  • surface pits (size > 0.2um):≦ 5000 ea

  • surface defect (size > 10um):≦ 1 ea/cm-2;

  • BPD counts:;≦ 20 ea

  • Die yield (2*2mm, EE 5mm):≧ 95%;

  • Buffer Layer

  • Target Thickness (avg.):0.5um±10%;

  • Target Doping concentration (avg.):;1.0E18/cm3 ±10%;

  • Drift Layer

  • Target Thickness (avg.):10um ±6%;

  • Target Doping concentration (avg.):8.5E15/cm3 ±10%;

  • Wafer edge: Chamfer;
  • Surface finish: Double Side Polish, Si Face CMP;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;

Our Products and Service:

  • Tracking number for every order

  • 24/7 assistance: service@fuledatech.com

  • Provide small quantities, special specifications products, and customized services, etc.

Shipping Worldwide:

  • After confirming the order, we will arrange the shipment within 3-5 working days.
  • We provide free shipping for products purchased above a certain amount.
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