Silicon Carbide EPI Substrate 6inch Production Grade SiC Wafer IGBT
High-purity SiC substrate for research and development.
According to demand, we can provide custom-made service.
SiC Substrate Specification:
- Size: 6inch;
- Diameter: 150mm±0.5;
- Thickness: 350 um±25;
- Type:off-axis: N-Type;
- Primary flat Location:<1120>+/-5degree；
- Epi-surface Inspection
surface pits (size > 0.2um):≦ 5000 ea
surface defect (size > 10um):≦ 1 ea/cm-2;
BPD counts:;≦ 20 ea
Die yield (2*2mm, EE 5mm):≧ 95%;
Target Thickness (avg.):0.5um±10%;
Target Doping concentration (avg.):;1.0E18/cm3 ±10%;
Target Thickness (avg.):10um ±6%;
Target Doping concentration (avg.):8.5E15/cm3 ±10%;
- Wafer edge: Chamfer;
- Surface finish: Double Side Polish, Si Face CMP;
- Packing: Multi-wafer Cassette Or Single Wafer Container;
Our Products and Service:
- Tracking number for every order
- 24/7 assistance: email@example.com
- Provide small quantities, special specifications products, and customized services, etc.
- After confirming the order, we will arrange the shipment within 3-5 working days.
- We provide free shipping for products purchased above a certain amount.