Silicon Wafer 6inch N-Type(100) 4~6Ω Oxide Film 530nm
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High-purity Silicon wafer for Research and Experiment.
According to demand, we can provide custom-made service.
Silicon Wafer Specification:
- Size: 6inch;
- Method: CZ;
- Type: N;
- Dopant: P;
- Orientation: 100;
- Resistivity: 4~6Ω.cm;
- Thickness: 620um±25;
- TTV＜10um ;
- Surface: polished;
- Backside: etched;
- Oxide film: 530nm (both sides);
- Packing: silicon wafer case;
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