Silicon Wafer 6inch N-Type(100) 0.002~0.004Ω Oxide Film 300nm
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High-purity Silicon wafer for Research and Experiment.
According to demand, we can provide custom-made service.
Silicon Wafer Specification:
- Size: 6inch;
- Method: CZ;
- Type: N;
- Dopant: As;
- Orientation: 100;
- Resistivity: 0.002~0.004Ω·cm;
- Thickness: 625um±25;
- TTV＜10um ;
- Surface: polished;
- Backside: etched;
- Oxide film: 300nm (both sides);
- Packing: silicon wafer case;
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